Design and Investigation of Double Gate Field Effect Transistor Based H2 Gas Sensor Using Ultra-Thin Molybdenum Disulfide

In this article, a low-power hydrogen (H2) gas sensor has been proposed using two-dimensional (2D) material based Double Gate Field Effect Transistor (2D-FET). It is imperative to highlight that the conventional three-dimensional (3D) materials cannot be scaled down an ultra-low dimension due presence of dangling bonds, surface roughness scattering etc. This creates major challenge in developing low-dimensional sensors for next generation sensing and computing. context, we have developed extensive simulation model, which articulates physical phenomena behind catalytic metal gate-based 2D-FET. A 5 nm thin Molybdenum disulfide (MoS2) film used as channel 2D-FET sensor. The modelled by emphasizing on (Palladium) gate approach, where work function deposited top region varies after absorption gas. Moreover, Technology Computer Aided Design (TCAD) model considering change pressure H2 well. We also highlighted effect Metal/MoS2 contact performance. terms performance, maximum threshold voltage (Vth) shift 100 mV obtained against 10?10 torr, whereas percentage ION/IOFF 100. Lastly, authors shown thermal noise characteristics